Abstract
Dual δ-doped pseudomorphic high electron mobility transistors (pHEMTs) with various doping profile designs were adopted to investigate the relationship between the doping profile of pHEMTs and the surface phenomena. Compared to a single δ-doped pHEMT, the dual δ-doped design provided a high current density, which was suitable for low noise and high power applications [ IEEE Trans. Electron Devices , 35 , 879 (1988) ; J. Appl. Phys. , 81 , 3576 (1997) ]. The influence of the δ-doped layer in GaAs Schottky diode parameters was studied [ International Euroconference on Advanced Semiconductor Devices, pp. 391–394 (2000) ]. The dual δ-doped and doped-channel pHEMTs were also investigated and studied [ IEEE Trans. Electron Devices , 54 , 1617 (2007) ]. However, the lower/upper δ-doped layer doping profile and surface phenomena of pHEMTs are still ambiguous. In this work, the epitaxial concentration designs of lower and upper δ-doped layers were 1:3, 2:2, and 3:1 (unit: ) for dual δ-doped pHEMTs, respectively. The concentration profile of the lower and upper δ-doped layers can be adjusted to realize optimal low noise and high linearity pHEMT.
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