Abstract
Based on the hydrodynamic energy transport model, the electrical characteristics of grooved-gate p-channel metal-oxide-semiconductor field-effect transistors (PMOSFETs) are studied and compared with those of corresponding conventional planar PMOSFETs. The simulations reveal that the short-channel effect and drain-induced barrier lowering (DIBL) are absent in grooved-gate PMOSFETs, which have good hot-carrier effect immunity, but the drain current driving capability is lower than that in planar ones. Subsequently, the reasons for these differences between grooved-gate and planar PMOSFETs are analyzed from the viewpoint of interior physical parameter distribution. These parameters include surface potential, electric field, hot-carrier velocity, temperature and so forth.
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