Abstract
AbstractA silent discharge is one of the simplest methods for realizing a nonequilibrium plasma condition at atmospheric pressure. In this study, nonequilibrium plasma chemical reactions by this discharge have been applied to a remote plasma chemical vapor deposition (CVD) of silicon oxide films using tetraethylorthosilicate (TEOS) and oxygen. Film characteristics obtained by this CVD have been investigated for applications to advanced semiconductor devices. Conditions for depositing films with high quality have been investigated minutely. From these results, it has been clarified that silicon oxide films with high quality and excellent step coverage can be obtained by plasma excitation using pulsed silent discharge. It has also been clarified that films with similar characteristics can be obtained by plasma excitation using low‐frequency AC silent discharge at subatmospheric pressure. © 2004 Wiley Periodicals, Inc. Heat Trans Asian Res, 33(2): 106–116, 2004; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/htj.20000
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