Abstract
A Cu2ZnSnSe4 (CZTSe) film was formed by the selenization of Cu(Zn, Sn) (CZT) alloy precursors. The CZT precursor was prepared by depositing zinc onto a layer of Cu-Sn co-sputtered on molybdenum-coated soda-lime glass. Selenium was evaporated on the CZT precursor. The CZTSe film was then annealed for a minute at various substrate temperatures ranging from 350°C to 650°C in steps of 50°C in a rapid thermal process using tungsten halogen lamps. The lattice parameters of the CZTSe annealed at temperatures over 500°C were found to be a = 5.709 Å and c = 11.351 Å. We also found that the energy gap of the CZTSe was 1.137 eV, which was independent of the annealing temperature.
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