Abstract
impurity content of the Co films was minimized using a H2 plasma in the process pressure range between 0.1 and 2 Torr at a plasma power of 300 W. The carbon and the oxygen contents of the Co films were about 7 at.% and below 1 at.%, the detection limit, respectively. The Co films showed a very uniform surface with a root-mean-square (RMS) roughness of 1.51 ˚ as determined by using an atomic force microscopy (AFM) analysis. The Co films deposited on contact holes, about 0.12 µm wide and 1.8 µm deep, showed excellent conformal coverage. The compositions of the Co films on the tops and the sidewalls of the contact holes were examined with Auger electron spectroscopy (AES), and the results showed nearly identical compositions.
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