Characteristics of Cluster Implantation and Low Diffusion Annealing

Abstract

Beyond 45 nm device fabrication, it is recognized that the ultra‐shallow junction (USJ) formation is required, which is achieved by the ultra‐low energy ion implantation and ultra‐low diffusion annealing. For this purpose, Cluster ion implantation (CII) and the Flash lamp annealing (FLA) activation processes have been developed. In this paper, we introduce characteristics of activation using B18Hx+ implantation with FLA, which are applied to a source drain extension (SDE) for pMOSFET in Hgh‐k/metal process. We will prove that the combined process of B18Hx+ and FLA can make the low sheet resistance and the fine crystal recovery for USJ formation such a SDE. Moreover, the combined process of C7Hx+ implantation and FLA can make the high stress region for nMOSFET by the high substitutional Carbon. If both of B18Hx+ implantation and C7Hx+ implantation with FLA are applied to High‐k/metal process, it will give the highest performance. The combination of FLA and cluster ion implanter “CLARIS” which is developed ...