Abstract
Phase-change nonvolatile memory cell elements composed of Sb 2Te 3 chalcogenide have been fabricated by using the focused ion beam method. The contact size between the Sb 2Te 3 phase change film and electrode film in the cell element is 2826 nm 2 (diameter: 60 nm). The thickness of the Sb 2Te 3 chalcogenide film is 40 nm. The threshold switching current of about 0.1 mA was obtained. A RESET pulse width as short as 5 ns and the SET pulse width as short as 22 ns for Sb 2Te 3 chalcogenide can be obtained. At least 1000 cycle times with a RESET/SET resistance ratio >30 times is achieved for Sb 2Te 3 chalcogenide C-RAM cell element.
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