Abstract
Batium strontium titanate (BST) is an important material for dynamic random access memory capacitor applications. In this work, BST thin films are prepared by the MOD method and metal-BST-metal capacitors are fabricated. The DTA and TGA analysis and FTIR analysis are carried out to study reactions of precusor during the heat-treated process. The increase of the crystallinity of films improves the dielectric constant. A 420nm BST thin film annealed at 750 obtains pure perovskite phase and has a maximum dielectric constant of 628 (at 100 kHz). The relative dielectric permittivity of (Ba x Sr 1- x )TiO 3 with various Ba/Sr ratio is measured and the optimum value of x seems to be 0.6. The leakage current density of the BST thin film is about 0.03 uA/cm 2 at 3V applied voltage.
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