Abstract
This work presents characterization of implanted and annealed heterostructure. Boron was implanted into CdHgTe film with an ion energy of 100 keV and dose of. The photoresponse, infrared transmittance spectra, surface morphology as well as optical and electrical properties of heterostructures were investigated. It was shown that the implantation of elements with a small ionic radius, such as boron, leads to compressive stress in the crystal lattice and to formation of a layer with optical properties which distinct from the matrix ones. Distribution profile of the implant as well as the solute lattice contraction coefficient ( ) and the maximumvalue of mechanical stresses ( 4·104 Pa) were calculated for ion implanted CdHgTe film.
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