Abstract
Boron delta-doped profiles with peak concentrations above the full activation limit have been grown on (100)-oriented single crystal diamond substrates by microwave assisted CVD using a solid doping source technique. The growth process was optimized targeting electronic device applications. Up to now these profiles could only be analyzed by chemical/physical profiling and it had been difficult to relate these profiles to the electrical characteristics. For the first time, ERD (Electron Recoil Detection) profiles could be correlated with free carrier profiles extracted by electrochemical profiling based on electrochemical impedance analysis. The comparison shows, that it is possible to incorporate boron on acceptor site with high efficiency even for concentrations in the order of 10 21 cm − 3 by the doping technique developed.
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