Abstract
Bipolar transistors having n+ buried layers of various depths formed by high-energy ion implantation are investigated in order to obtain bipolar transistor of various performances in a single chip. The breakdown voltage between the emitter and the collector (BVCEO) values are controlled and decreased with increasing oxide thickness with high-energy ion implantation in Si dioxide films of varying thicknesses. The maximum BVCEO value obtained is 7.8 V. Base-collector leakage currents are very small when secondary defects are contained within the n+ buried layer. This method should be very effective for designing both BiCMOS and multifunction LSIs.
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