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Abstract
Abstract BaMgF4 (BMF) films was deposited on p-Si by vacuum evaporation with substrate temperature in the range of 100–400 C. Films deposited at 100 C were amorphous and became polycrystalline at an annealing temperature of 600 C, whereas films deposited above 300 C were polycrystalline. X-ray diffraction shows the formation of orthorombic phase with a = 4.130 A, b = 5.189 A, and c = 14.510 A. The deposited BMF films have been encapsulated with various materials like ZrO2 and amorphous Si. The capacitance-voltage characteristics of MFS capacitors show hysteresis and the direction of hysteresis corresponds to ferroelectric polarization. The current-voltage characteristics of the MOSFETs show a threshold voltage shift which confirms the non-volatile memory behaviour.
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