Abstract
Pulsed laser deposition of ferroelectric Bi 3.25 La 0.75 Ti3 O 12 thin films was carried out for 5 mins at a substrate temperature of 400°C and a given partial oxygen pressure of 200 m Torr. Studies on the electrical properties of a metal-ferroelectric-insulator-semiconductor (MFIS) field effect transistor using Au/Bi 3.25 La 0.75 Ti 3 O 12 /Si3N 4 /Si have been conducted through measurements from capacitance-voltage and memory window characteristics for films prepared with different annealing temperatures and applied bias voltages. The films showed c-axis crystallizations at higher annealing temperatures but on the other hand, the memory window values had a tendency to decrease with respect to increasing temperatures. As the bias voltage was varied at 3 V, 5 V, 7 V, and 10 V for the film annealed at 700°C, the memory window values were measured to be 0.2 V, 0.36 V, 0.8 V, and 1 V, respectively.
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