Abstract
Zinc oxide (ZnO) and Al-doped ZnO (AZO) thin films were deposited on glass substrates using atomic layer deposition. The Al composition of the AZO thin films was varied by controlling the Zn:Al cycle ratios. The ZnO and AZO thin films were characterized using atomic force microscopy, X-ray photoelectron spectroscopy, X-ray diffraction, and optical measurements. The electrical properties of the ZnO and AZO thin films were influenced by the Zn:Al cycle ratios. The resistivity of the AZO thin film decreased significantly, whereas the carrier concentration increased with the Al composition. As the Zn:Al cycle ratio increased, the AZO thin film achieved an average transmittance of >85%.
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