Abstract
In the present work, we have investigated the characteristics of a-SiGe:H solar cell with an optical absorption layer (a-Si:H, a-SiGe:H) between p-layer and n-layer. The characteristics of the fabricated a-SiGe:H solar cells were carried out with a-Si:H and a-SiGe:H according to various thickness in the intrinsic layer. The entire thickness of a-Si:H and a-SiGe:H layers were 2000 Å whereas thickness of a-Si:H layer was varied from 50 Å to 800 Å. Modulating thickness of a-Si:H layer, we verified parameter characteristics of fabricated solar cell such as open-circuit voltage (VOC), short-circuit density current (JSC), fill factor (FF), and conversion efficiency (η) comparing with a-SiGe:H solar cell by using an XEC-301S solar simulator that was composed of a Xenon lamp and AM filter under standard AM 1.5G conditions. Further analysis the UV-VIS Spectrometer and Quantum efficiency (QE) are used to verify the transmittance and absorptance, respectively. It was observed that the higher performances (Voc: 0.54 V, Jsc: 20.64 mA/cm2, FF: 0.41 and η: 4.59%) of a-SiGe:H solar cell with thickness of a-Si:H layer in the intrinsic layer. This ascribed to fact that the insertion of a-Si:H layer increased the performance by influencing the intrinsic layer of a-Si:H solar cell.
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