Abstract
In this work, thin films of Pt/Co0.2TiO3.2 (23 nm)/ITO were investigated showing their memristive capacity related to analog switching properties. A temporal analysis of current and voltage in nonlinear I–V graphs shows pinched hysteresis loop with gradual distribution in its electrical conductivity, typical of analog systems. The presence of trap centers such as oxygen vacancies suggests that the specific conduction mechanism is space-charge-limited current (SCLC). In addition, we study its performance under repetitive voltage pulses as well as at different durations. We further conducted data retention tests in the memristor high resistance state (HRS) and low resistance state (LRS).
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