Abstract
We have investigated the properties of InGaZn6O9 thin films fabricated by radio frequency (RF) magnetron sputtering for the application to the electrodes in transparent thin film transistor (TTFT). The InGaZn6O9 thin films have been prepared with varying working pressure and RF power. It has been found that the InGaZn6O9 films have an amorphous structure and show a very smooth and featureless surface regardless of the deposition conditions. At optimized deposition condition, the InGaZn6O9 film shows an average transmittance of about 83.54% in the visible region and the sheet resistance of about 91.6 Ī©/sq. The top gate InGaZnO4 TTFT device embedded with InGaZn6O9 electrode operates in enhanced mode with a threshold voltage of 1.1 V, a mobility of 3.48 cm2/Vs, an on-off ratio of > 104, and a sub-threshold slope of 0.9 V/decade. In addition, the optical transmittance of the TTFT device is observed about 85% at 550 nm wavelength.
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