Abstract
Room temperature storage and/or minority carrier injection behaviors of three prominent majority carrier levels H3 (Ev+0.34 eV), H4 (Ev+0.39 eV) and H5 (Ev+0.58 eV) and three minority carrier levels, 0.22, 0.29 and 0.35 eV below the conduction band edge in metal-organic chemical vapor deposition (MOCVD) grown p-type InP crystals produced by alpha radiation have been studied using deep levels transient spectroscopy. In particular, H5, absent immediately after irradiation, is found to grow with storage at room temperature after irradiation with no change in the other two majority carrier levels. Minority carrier injection saturates H5 while H3 and H4 continue to decay after injection. These observations are interpreted to mean that H4 and H5 are unrelated levels with no or very little mutual conversion proposed in some previous irradiation studies. Detailed production rate data for H3, H4 and H5 (post-injection) over a range of alpha-particle doses have also been provided for the first time.
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