Abstract
We investigated the characteristics of GaON films grown by reactive magnetron sputtering on sapphire substrate for use as a sacrificial layer in a laser lift-off (LLO) process. Due to the desirable bandgap (4.58 eV) of the amorphous GaON film, which is suitable for absorbing 248 nm KrF excimer laser (5.0 eV) energy, the amorphous GaON layer was easily separated from the original sapphire substrate through irradiation of the KrF excimer laser. It was found that irradiation from a KrF excimer laser (550 mJ/cm2) at the a-GaON/sapphire interface led to rapid thermal decomposition of the a-GaON, producing metallic Ga and O2 and N2 gases and inducing separation from the sapphire substrate. This indicates that amorphous GaON film is a promising sacrificial layer for use in the LLO process for transfer of devices from a rigid sapphire substrate to flexible substrates.
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