Abstract
The sensing characteristics of a Pt/NiO thin film-based resistor-type ammonia gas sensor are comprehensively studied and demonstrated. Experimentally, the studied Pt/NiO ammonia gas sensor exhibits improved performance, including a higher sensing response of ratio of 1278%, an extremely low detection limit of 10ppb NH3/air, and fast speeds, at an optimal operating temperature of 300°C. Based on the advantages indicated above and the benefits of its simple structure, relatively easy fabrication, and inherent p-type semiconductor properties, the studied device is promising for high-performance ammonia gas sensing and complementary metal oxide sensor (CMOS) array applications.
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