Characteristics of a-plane GaN with the SiN x insertion layer grown by metal-organic chemical vapor deposition

Abstract

We utilized in-situ-grown SiN x insertion layers to mitigate part of dislocations stretching in nonpolar a-plane GaN films using metal-organic chemical vapor deposition. Both X-ray diffraction (XRD) and atomic force microscopy (AFM) measurements revealed that better crystal quality and smoother surface could be obtained when the in-situ SiN x layer was inserted closer to the r-plane sapphire substrate and indicated that the in-situ SiN x insertion layer could suppress dislocations caused by lattice mismatch between the sapphire and epitaxial layers. In addition, photoluminescence and cathodoluminescence measurements confirmed the effect of the in-situ SiN x insertion layer on the optical properties of the improved a-plane GaN thin film, which is consistent with the XRD and AFM analyses and suggested reduction in the density of nonradiative centers.