Abstract
The characteristics of a photovoltaic X-ray detector based on the GaAs p +-n-n′-n + epitaxial structure grown using gas-phase epitaxy are studied. Typical current-voltage and capacitance-voltage characteristics of the epitaxial structures are analyzed together with the built-in electric field profile in the n-GaAs depleted region. The efficiency of charge accumulation in the photovoltaic detector is measured for zero bias and for a bias voltage of 17 V. It is shown that the GaAs-based photovoltaic X-ray detector can operate with zero bias voltage at room temperature. The sensitivity of the detector is measured as a function of the effective energy of X-rays and the angle of incidence of X-ray photons.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
