Characteristics of a new camel-gate field effect transistor (CAMFET) with a composite channel structure

Abstract

A new camel-gate field effect transistor (CAMFET) with a composite channel structure has been fabricated and demonstrated. Due to the n+-InGaP/p+-InGaP/GaAs camel gate and InGaAs/GaAs composite channel structures employed, good device performance is observed. Experimentally, at room temperature, a gate-drain breakdown voltage over 15 V, maximum transconductance gm,max of 111.5 mS mm−1, voltage gain AV of 93.4, unity current gain cut-off frequency fT of 16.2 GHz and maximum oscillation frequency unity fmax of 24.2 GHz are obtained simultaneously for a 1 × 100 µm2 device. The studied device also shows good properties in a higher temperature regime. Moreover, the studied device exhibits relatively negligible temperature-dependent characteristics over the operating temperature range from 300 to 420 K. Therefore, the studied device provides promise for high-temperature and high-performance microwave electronic applications.