Characteristics of a Multiple-Layered Graphene Oxide Memory Thin Film Transistor with Gold Nanoparticle Embedded as Charging Elements

Yo-Han Kim,Tae Seok Seo,Bum Jun Park,Huynh Quoc Nguyen,Hyun Ho Lee,Hassan Karimi-Maleh

doi:10.1155/2021/6689861

Yo-Han Kim, Tae Seok Seo + Show 4 more

Open Access

https://doi.org/10.1155/2021/6689861

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Abstract

In this study, we report the highest mobility in the reduced graphene oxide- (rGO-) based TFTs embedded with Au NPs. In addition, we fabricated a reduced graphene oxide memory device (rGO-capacitor), a reduced graphene oxide thin film transistor (rGO-TFT), and a reduced graphene oxide memory thin film transistor (rGO-MTFT) and characterized their electrical performances. While the rGO-TFT device was investigated for nonambipolar channel performance, the rGO-capacitor and rGO-MTFT were examined for nonvolatile memory capabilities in a metal-graphene-insulator-silicon (MGIS) structure. The incorporation of the gold nanoparticles (Au NPs) between the rGO and an insulator silicon dioxide (SiO2) layer served as a charging element. The rGO-capacitor revealed the memory effect of hysteretic capacitance-voltage (C-V) loops, and the flat-band voltage shift ( Δ V FB ) was measured as 0.1375 V after 100 s retention time. The rGO-TFT shows the p-channel characteristics with high hole mobility of 16.479 cm2/V⋅s. The threshold voltage shift ( Δ V th ) of the rGO-MTFT was detected as 5.74 V from 10 V to -30 V sweep, demonstrating high mobility of 22.887 cm2/V⋅s.

Highlights

Since the discovery of graphene by Novoselov and Geim in 2004, two-dimensional (2D) materials have ushered in a new era for next-generation nanoelectronics [1, 2]
This is the highest mobility in the reduced graphene oxide- based TFTs embedded with Au nanoparticle (Au NP)
We demonstrated the performance of reduced graphene oxide- (rGO-)MTFT with large scale of channel width (100 μm) and length (100 μm), which can be confirmed from a threshold voltage shift (ΔVth) of transfer curve after bias in a gate electrode

Summary

Introduction

Since the discovery of graphene by Novoselov and Geim in 2004, two-dimensional (2D) materials have ushered in a new era for next-generation nanoelectronics [1, 2]. There have been many reports of memory effects using active rGO layers and embedded metal NP devices, fundamental studies of memory windows on charging behavior or charge storage in NPs with solutionprocessed rGO and reduced graphene oxide quantum dot (rGOQDs) films have not been extensively reported [16,17,18,19,20,21,22]. We present the reduced graphene oxide memory thin film transistor (rGO-MTFT) device with high mobility of 22.887 cm2/V⋅s. This is the highest mobility in the reduced graphene oxide- (rGO-) based TFTs embedded with Au NPs. The MTFT fabrication was based on the formation of Au NPs as charge storage elements, and the monolayer of rGO was accomplished at room temperature using a dip-coating process. We demonstrated the performance of rGO-MTFT with large scale of channel width (100 μm) and length (100 μm), which can be confirmed from a threshold voltage shift (ΔVth) of transfer curve after bias in a gate electrode

Experimental Section

Result and Discussions

Findings

Conclusion