Characteristics of a miniature dosimeter developed for measurement of electrons

Abstract

Characteristics of the miniature dosimeter developed for the measurement of electrons are described in this report. This dosimeter is very easily used without applied bias voltages. This is a silicon diffused n-p + junction device. The silicon detecting element of this dosimeter has the form of a disk, and the front area is 1.72 × 10 −2 cm 2. The energy range of electrons used in this experiment is 0.6–1.8 MeV. The electron-induced currents were proportional to the number of incident electrons over the range of 1.5 × 10 4–1.5 × 10 9 electron/s, and the energy absorbed in the sensitive volume of this dosimeter was about 39 keV per incident electron and had little dependence on the electron energy range of 0.8–1.8 MeV. The depletion layer of this dosimeter and the contribution of backscattered electrons to the total energy absorbed in the sensitive volume were about 90 μm and about 15%, respectively.