Abstract
We demonstrate high temperature electrical spin injection and detection in degenerately p-doped GaAs in vertical spin valves using valence band electron tunneling. The maximum measured magnetoresistance at 10 and 300 K is 40% and ∼1%, respectively. Spin relaxation in these devices was found to be relatively insensitive to temperature (T) for T>125 K. The spin injection and detection efficiencies are mostly dominated by the ferromagnetic contact polarization and spin independent transport at the ferromagnet/semiconductor interface.
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