Abstract
SiC-MOSFETs provide superior performance for next generation power electronics systems. High threshold voltage 600 V SiC-MOSFETs were realized utilizing a reoxidation process, which drastically improves a tradeoff between an ON-resistance and a threshold voltage. Low-loss SiC-MOSFETs with a 1200 V/100-A rating have been developed. Using the developed SiC-MOSFETs, 1200 V/800-A high-power full SiC module with an ON-resistance as low as 2.9 m $\Omega $ at 150 °C was successfully fabricated. The high-power module markedly reduces power loss especially at high carrier frequency. Large-area 3300 V SiC-MOSFETs with an ON-resistance of 52 m $\Omega $ at 175 °C exhibit an adequate reverse bias safe operating area and 3300 V SiC-MOSFETs screened by applying a body diode current stress show stable characteristics under a continuous current through their body diode for 1000 h.
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