Characteristics of 1.0 MeV electron-irradiated surface-controlled silicon junction diodes

Abstract

The effects of 1.0 MeV electron irradiation on the reverse bias leakage current of diffused silicon junctions have been determined. The leakage current can be divided into surface components and bulk components. The conditions necessary to cut off the surface components have been determined. The increase in the bulk leakage current has been related to an increase in the diffusion current at low fluxes and to generation current from an Ev + 0.388 eV center in the depletion region at high fluxes. (auth)