Abstract
A new algorithm for the inhomogeneous Boltzmann equation in one spatial and velocity dimension, based on the method of characteristics, is presented. Using the analytic solution to the Boltzmann equation along its characteristics, the solution to the classical transport problem in semiconducting structures within the relaxation time approximation for the collision integral is obtained iteratively. An n+nn+‐diode is studied numerically and the effects of ballastic electrons on low‐order moments are investigated.
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