Abstract
AbstractWe have investigated the structural and electrical properties of Sr-modified Pb(Zr,Ti)O3, i.e., (Pb1-xSrx)(Zr0.53Ti0.47)O3 (PSZT), thin films. Sol-gel derived PSZT films were deposited by spin casting onto Pt/Ti/SiO2/Si substrates. Ferroelectric perovskite phases were found for all specimens (x ≤ 0.6), which implied the successful substitution of Sr for Pb. The values of dielectric constant (εr) as well as remanent polarization (Pr) of PSZT capacitors decreases monotonically with increasing Sr for x ≥ 0.1. PSZT (x=0.4) thin film was found to be applicable to high permittivity films for high density dynamic random access memories, whose Pr and εr are 5 μC/cm2 and 350, respectively, and leakage current density is low as 1×10−7 A/cm2 at a electric field of 100 kV/cm. In this paper, we also discuss the characteristics of Sr-modified PbTiO3 thin films.
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