Characteristics Analysis of Si0.5Ge0.5 Doping-Less PNPN TFET

Abstract

In this paper, we report a 2-D simulation study of charge plasma technique-based Si0.5Ge0.5 hetero-gate dielectric doping-less tunnel field effect transistor using hetero-gate materials (DL-PNPN TFET). The usage of two gate materials of different work functions not only creates an N+ source pocket which modulates the energy band on the source side, but also avoids the use of ion implantation. The comparative analysis of Si0.5Ge0.5 with Si is carried out, in which Si0.5Ge0.5 has proven to exhibit better performance than Si DL-PNPN TFET in terms of subthreshold swing (SS) and improved ON-state current due to its low bandgap (0.81 eV). Thus, our results of Si0.5Ge0.5 may help in realizing low bandgap DL-PNPN TFETs at low cost for low-power applications.