Abstract
In this paper, a theoretical model was described to analyze the magnetic relaxations of samples of copper oxide thin film cells. Experimentally, the copper oxide thin film was characterized at different oxidation temperatures between 150°C to 450°C. The introduction of the Bloch NMR equations was developed to determine the functionality of the individual samples. The magnetic relaxation characterization confirmed the degree of disordered in the copper oxide sample. This disorderliness of the copper oxide sample engendered a magnetic instability which gave rise to magnetic deflagration. Magnetic deflagration was found to be dependent on the magnetic re-orientation initiated by the RF pulse. A new law was proposed which is a modification of the Arrhenius law.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
