Abstract
The properties and characteristics of graded Al component Ga1-xAlxAs/GaAs photocathode are investigated in this paper, especially the transient reflectivity of Ga0.37Al0.63As under the condition of femtosecond laser illumination. Using software CASTEP, we calculate and analyze the optoelectronic property of varied Al composition Ga1-xAlxAs photocathode based on first principle theory. Ga0.37Al0.63As is emphasized studied because its lattice constant is very close to GaAs, reducing the probability of lattice mismatch and the back interface recombination velocity on the interface of substrate and emission layer. In this work, we design two reflection mode GaAs photocathode samples with different doping method: uniform-doping and exponential-doping used in emission layer grown by MBE. The impacts of different doping method on photocathode are analyzed by comparing some typical performance parameters. Transient reflectivity rates of different doping method Ga1-xAlxAs/GaAs photocathode are investigated by the device of pump-probe transient reflectivity system in the paper and we found that the way of exponential-doping is better for improving the performance of Ga1-xAlxAs /GaAs photocathode. The potential value of transient property of photocathode is enormous in future.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
