Abstract

LSA oscillation in GaAs has been analyzed to obtain quantitative frequency-independent interrelationships between RF output power, conversion efficiency, negative RF conductivity, dc electric field, and RF electric field on a per carrier basis. There are limited ranges of compatible RF electric fields, dc electric fields, and matched RF load resistances that define all possible operating points for stable LSA oscillation. Two factors characterizing space-charge control are computed and found to depend on the operating point and the carrier concentration-to-frequency ratio.

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