Characteristic of the photoconductivity of thallium monoselenide

Abstract

AbstractSystematic investigations on thallium monoselenide single crystal photoconductivity were reported at 300 K as a function of excitation intensity, side illumination, and wavelength. The samples were prepared using Bridgman technique. The photoconductivity as a function of the modulation frequency of the incident light was plotted at different values of light intensity. The effect of light intensity on the photocarrier lifetime was studied. The relation between the photocurrent and applied voltage at different values of light intensity was represented graphically. Side illumination effect in all these relations was checked. The spectral distribution of the photoconductivity of TlSe in the spectral region 1.24 ev to 1.77 ev was measured, and the energy gap was evaluated. All results were discussed and analyzed. Studies for such samples are very important and necessary in order to understand their use as photoconductor.