Abstract
ABSTRACT The (PbxSr1-x)TiO3 (PST) thin films were deposited on LaNiO3 (LNO(1 0 0))/ Pt/Ti/SiO2/Si substrates electrode by RF-magnetron sputtering using three different Pb target composition ranging from 32.5%∼37.5% and different process condition. Structural and dielectric properties of the PST thin films for tunable microwave and DRAM application were investigated. The PST thin films deposited at 400°C show higher dielectric constant than those post-annealed at 600°C because of better crystallization. The former also have lower leakage current around 10−8 A/cm2 up to applied field of 350 kv/cm, which is suitable for DRAM application. On the other hand, the post-annealed PST thin films have satisfactory tunability around 58% and figure of merit around 30, which are more suitable for microwave device application.
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