Abstract

We succeeded in growing single crystals of SrAl4 and related compounds with the BaAl4-type tetragonal structure by the self-flux method, and measured the electrical resistivity, magnetic susceptibility, Hall coefficient, thermoelectric power, and de Haas–van Alphen (dHvA) effect. A plausible characteristic feature of the charge density wave (CDW) was observed below TCDW = 243 K in SrAl4. We also studied an effect of pressure on the electronic state in SrAl4 by measuring the electrical resistivity and thermoelectric power. TCDW is found to decrease with increasing pressure, with a rate of dTCDW/dP = −12.5 K/GPa. To clarify the Fermi surface nesting, we studied the Fermi surface in SrAl4, which is found to be different from the Fermi surfaces of the similar compounds SrGa4, BaGa4, and BaAl4 without CDW. The Fermi surfaces in these compounds were determined from the dHvA experiments, together with the energy band calculations.

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.