Abstract
This article investigates the single-event effects on 16-nm bulk field-effect transistors (FinFETS) in terms of single-bit upsets and multiple-cell upsets under heavy ion irradiation. These upsets are analyzed and classified according to voltage, linear energy transfer of ions, data patterns, and fail bit patterns. The analysis suggested a characteristic charge collection mechanism attributable to the FinFET structure. Estimation of a unique sensitive area shape based on cross sections is also discussed.
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