Abstract
In this study, an AlGaN/GaN high-electron-mobility transistor (HEMT) was grown through metal organic chemical vapor deposition on a Qromis Substrate Technology (QST). The GaN on the QST device exhibited a superior heat dissipation performance to the GaN on a Si device because of the higher thermal conductivity of the QST substrate. Thermal imaging analysis indicated that the temperature variation of the GaN on the QST device was 4.5 °C and that of the GaN on the Si device was 9.2 °C at a drain-to-source current (IDS) of 300 mA/mm following 50 s of operation. Compared with the GaN HEMT on the Si device, the GaN on the QST device exhibited a lower IDS degradation at high temperatures (17.5% at 400 K). The QST substrate is suitable for employment in different temperature environments because of its high thermal stability.
Highlights
GaN is widely used in high-frequency and high-power next-generation devices because of its two-dimensional electron gas (2DEG) concentration, high carrier mobility, low ON resistance, and high breakdown voltage [1,2,3]
Sapphire and Si are commonly used as substrate materials for GaN; their low thermal conductivity limits heat dissipation from device-level self-heating during the operation of high-electron-mobility transistors (HEMTs) and may influence the electrical characteristics, reliability, and performance of HEMTs [4,5,6]
The lattice mismatch in buffer layers is compensated with Fe and C doping, which causes the semi-insulating layer to increase the breakdown voltage and reduce the leakage current of the device
Summary
GaN is widely used in high-frequency and high-power next-generation devices because of its two-dimensional electron gas (2DEG) concentration, high carrier mobility, low ON resistance, and high breakdown voltage [1,2,3]. Sapphire and Si are commonly used as substrate materials for GaN; their low thermal conductivity limits heat dissipation from device-level self-heating during the operation of high-electron-mobility transistors (HEMTs) and may influence the electrical characteristics, reliability, and performance of HEMTs [4,5,6].
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
