Abstract
The influence of ion species on the ion-cut, or smart-cut© process in GaAs has been investigated in this paper. Semi-insulating GaAs, implanted with H2+, He+ and Ne+, were studied by Rutherford backscattering spectroscopy (RBS) in channelling mode, to investigate the lattice disorder produced by implanting different ion species. The RBS spectra show that surface dechannelling is enhanced where blisters are present. The samples were also studied by Nomarski microscopy and atomic force microscopy to investigate the effect of the ion species on the blistering process. It was found that the ion-cut process can be achieved at lower doses by using the implantation of He alone rather than H. Our results indicate that the implantation of Ne is not a suitable alternative to H or He implantation.
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