Characterisation, simulation and test beam data analysis of stitched passive CMOS strip sensors

Abstract

In the passive CMOS Strips Project, strip sensors were designed at the University of Bonn and produced by LFoundry in 150 nm technology, with an additional backside processing from IZM Berlin. Up to five individual reticules were connected by stitching at the foundry in order to obtain the typical strip lengths required for the LHC Phase-II upgrade of ATLAS or CMS trackers. Sensors electrical properties were simulated using Sentaurus TCAD and the results were compared to experimentally measured data. Detector modules were also constructed from several sensors and thoroughly studied in two beam campaigns at DESY. All of these measurements were performed before and after irradiation. This contribution provides an overview of simulation results, its comparison to measured data and in particular presents first test beam results for irradiated and unirradiated passive CMOS strip sensors. We are demonstrating that large area sensors with sufficient radiation hardness can be obtained by stitching during the CMOS process, and presenting our plans for the next submission in the framework of this project.