Abstract
In order to replace chemical bath deposited (CBD) CdS buffer layers in Cu(In,Ga)Se 2 (CIGS) solar cells by an alternative material, In x S y thin-film buffer layers were prepared by ultrasonic spray pyrolysis at various substrate temperatures. X-ray Diffraction measurements confirmed that the films contained primarily the tetragonal In 2S 3 phase. X-ray Photoelectron Spectroscopy measurements revealed a small concentration of chlorine impurity throughout the In x S y layer. By depositing the indium sulphide layer as buffer layer in the CIGS solar cell configuration, a maximum solar cell efficiency of 8.9% was achieved, whilst the reference cell with CdS/CIGS on a similar absorber exhibited 12.7% efficiency. Additionally, light soaking enhanced the efficiency of In x S y /CIGS cells primarily by improvements in fill factor and open circuit voltage.
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