Abstract
Combined TEM, HREM, ED, SIMS, X-ray and electroluminescence studies were used to characterise in detail a highly effective IR-LED emitting at the wavelength 1.66 μm and based on buried heterostructure In0.88Ga0.12As0.26P0.74/In0.72Ga0.28As0.62P0.38/In0.53Ga0.47As/InP grown by liquid-phase epitaxy. The InGaAsP epilayers were found to be well lattice-matched, dislocation free and of good structural quality. A tentative explanation is presented for the spinodal decomposition observed in InGaAsP alloys. A new type of selective methane gas sensor has been developed and fabricated on the basis of the IR-light emitting diode mentioned above. It is shown that the proposed type of sensor can be used for the quantitative remote control of methane gas concentration (0.2–100%) via a fibre glass line up to the distance of 2 × 1 km.
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