Abstract
By using reflectivity and temperature resolved Hall measurements the electrical properties of low pressure solution grown (LPSG) GaN are determined. Hall measurements show that the material is degenerate. The reflectivity spectra are governed by the free electron gas in accordance with this finding. The charge carrier concentration is about 4 × 1019 cm–3 and the mobility 70 … 80 cm2/V s. These results are compared to gallium nitride synthesized by other solution or vapour phase growth techniques. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
