Abstract
We analysed the electronic and optical properties of oxygen-related striations in n-type Czochralski silicon wafers that underwent polysilicon contact process using deep level transient spectroscopy and micro-photoluminescence. Band to band micro-photoluminescence spectra measured at low temperature (80 K) indicate that the dark striations with low lifetime originate from nano-scale oxygen precipitates. Deep level transient spectroscopy results indicate that such nano-scale precipitates cannot be considered as point defects and analysed with Shockley-Read-Hall recombination statistics, but must be treated as extended defects with a continuous spectrum of energies.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
