Abstract

A grating was defined in a silicon nitride waveguide, using a combination of both conventional lithography and laser interference lithography. The structure was optically characterized in the 1520 ? 1560 nm wavelength range by combining transmission measurements with the analysis of local out-of-plane scattered light, using a high-resolution infrared camera. From the measured power enhancement of the first Bloch-mode resonance above the long-wavelength band edge we estimated a Q > 104 and a group velocity of < 0.1 c.

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