Abstract
Polymer based adhesives filled with silver particles are widely used in microelectronics for bonding semiconductor chips to substrates. This paper presents results from thermal conductivity and thermal resistance measurements in such adhesives as function of the volume fraction of silver and the thickness of the bond layer. This is an increasingly important issue because the power dissipation in typical semiconductor chips is increasing rapidly due to technological developments. The thermomechanical stress caused by different thermal expansions in the chip and the substrate was also measured. Thermomechanical stress may cause cracking of the chips and subsequent failure of the microelectronic device. Crack growth in the bond layer during temperature cycling was investigated by measuring the thermal resistance in the layer. The cracks are created because of the differences in thermal expansion which causes a cyclic mechanical boding of the adhesive during temperature cycling.
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