Abstract
A technology for the fabrication of p-type microstrip silicon radiation detectors using p-spray implant insulation has been developed at CNM-IMB within the RD50 collaboration framework. The p-spray insulation has been designed to withstand the ionising irradiation dose expected in the middle region of the ATLAS tracking system for the future Super-LHC. Detectors have been fabricated with Float Zone and Magnetic Czochralski p-type high resistivity silicon substrates in the Clean Room facility of CNM-IMB, irradiated with neutrons up to a fluence of 10 15 neutrons cm - 2 and characterised at IFIC-Valencia. The results show a charge collection efficiency below 40% at 1000 V bias voltage.
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