Abstract
The n-type doping of Ga1-xAlxAs (x=0.25 to 0.35) with hydrogen selenide and silane has been studied. The room-temperature cathodoluminescence spectra and electron mobilities of epilayers with various doping levels have been measured and compared. Most n-Ga1-xAlxAs layers exhibit a luminescence emission at approximately=1.2 eV. It is shown that the ratio of the band-edge peak intensity to the approximately=1.2 eV emission peak intensity is a measure of the quality of the Ga1-xAlxAs. Double heterostructure lasers incorporating material that exhibits this 1.2 eV emission show increased threshold current density when the n-type doping level of the Ga1-xAlxAs is greater than 5*1017 cm-3.
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