Characterisation of ion-implanted pn-junction diodes in β-SiC films grown on (100) silicon substrates by reactive magnetron sputtering

Abstract

Planar ion-implanted pn-diodes in β-SiC grown by reactive magnetron sputtering have been found to work up to 270 °C. The diodes have low saturation current, and a turn on voltage of 1.6–1.7 V. The high ideality factor (> 5) indicates that the major contribution to the current comes from excess tunnel current.